2D Nanoscale Heterostructured Materials

2D Nanoscale Heterostructured Materials
Author: Satyabrata Jit,Santanu Das
Publsiher: Unknown
Total Pages: 400
Release: 2020-03
ISBN: 0128176784
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

2D Nanoscale Heterostructured Materials Book Excerpt:

2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area.

2D Nanoscale Heterostructured Materials

2D Nanoscale Heterostructured Materials
Author: Satyabrata Jit,Santanu Das
Publsiher: Elsevier
Total Pages: 284
Release: 2020-05-09
ISBN: 0128176792
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

2D Nanoscale Heterostructured Materials Book Excerpt:

2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials Discusses the applications of 2D heterostructured materials in various high-performance devices

Understanding and Engineering Electronic and Optoelectronic Properties of 2D Materials and Their Interfaces

Understanding and Engineering Electronic and Optoelectronic Properties of 2D Materials and Their Interfaces
Author: Youngwoo Son (Ph. D.)
Publsiher: Unknown
Total Pages: 143
Release: 2016
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Understanding and Engineering Electronic and Optoelectronic Properties of 2D Materials and Their Interfaces Book Excerpt:

In the pursuit of further miniaturization beyond Moore's law, tremendous effort has been dedicated to exploring the potential of two-dimensional (2D) materials for nanoscale electronic devices. 2D materials are a group of solid state materials that possess strong in-plane covalent bonds while individual atomic layers are held together by weak van der Waals (vdW) interactions. Hence, their bulk crystals can be exfoliated into few-layer or even atomically thin single-layers via micro-mechanical exfoliation techniques. These materials possess unique and exotic properties due to quantum confinement of importance to future electronics. However, many technical problems need to be solved to realize this goal. For example, as 2D material based devices become smaller down to the nanometer scale, the electrical contacts must also be reduced in scale which creates different characteristics from those of macroscopic counterparts. In addition, there are issues of reliability and stability with devices comprised of such materials. There is a need to understand the electronic and chemical properties of several interfaces that arise in such materials: metal-2D and 2D-2D junctions, for example. To this end, this thesis focuses on understanding nanoscale metal-2D semiconductor (SC) and 2D SC-2D SC junctions exploring: (1) electronic and optoelectronic behavior at the nanoscale junction of metal-MoS2 and dependence on the layer number (thickness), (2) realization of voltage selectable photodiodes based on a lateral in-plane MoS2-WSe2 heterojunctions, and (3) interfacial properties and (opto)electronic characteristics of a phosphorene-MoS2 vertical vdW p-n junction. The first part of this thesis explores the layer number dependent electrical characteristics of the MoS2-metal nanoscale junction using current imaging of MoS2 nanosheets consisting of regions of varying different thicknesses using conductive and photoconductive spectral atomic force microscopy (C- and PCS-AFM). The layer number dependence of the effective barrier was measured, by obtaining consecutive current images while changing bias voltages, showing it to be linear. At the same time, spatially resolved two-dimensional (2D) maps of local electrical properties are generated from simultaneously recorded local current-voltage (IV) data. Furthermore, the layer number dependent spectral photoresponse of MoS2 is investigated, which shows the highest response in single layer (1L) region. The photoresponse decreases for increasing layer number, but increases again between 4L and 1 OL due to increased light absorption. The photoresponse is also strongly dependent on the wavelength of the incident light, showing much higher currents for photon energies that are above the optical bandgap. The photoresponse in forward and reverse biases shows barrier symmetry for 1 L but asymmetry for 2, 3, and 4L, which further indicates a dominant role of the barrier on carrier transport at the junction. The second part of this thesis investigates the spatially resolved transverse electrical properties of the monolayer WSe2 -MoS2 lateral p-n heterostructures at their nanoscale junctions with metals both in the dark and under laser illumination. As in the first part of the thesis, C- and PCS-AFM, versatile tools to conveniently and efficiently interrogate layer-dependent electronic and optoelectronic characteristics in a MoS2 crystal containing regions of different thicknesses, which enables direct characterization and comparison of the different layer regions without the complexities associated with fabricating and testing of different individual field-effect transistor devices, are used for measurements. By performing current imaging using a PtIr-coated conductive tip on an ultrathin nanosheet that includes homogeneous crystals of WSe2 and MoS2 and a lateral junction region in between, many thousands of WSe2/MoS2/the junction-metal contact points form during imaging and directly compare their local properties at the same time under identical experimental conditions with the nanoscale spatial resolution. The third part of this thesis explores a new type of 2D vertical heterostructures that simultaneously possess desirable properties of constituent materials, paving the path for overcoming intrinsic shortcomings of each component material to be used as an active material in nanoelectronic devices. As a first example, a MoS 2-graphene vertical heterostructure is constructed and its charge transfer and photoluminescence (PL) at the interface are investigated. C-AFM and Raman spectroscopy show that there is a significant charge transfer between the two component materials. The PL intensity of monolayer MoS2 is noticeably quenched when in contact with a single layered graphene in comparison to that of a bare monolayer MoS2 crystal. Then, with the acquired understanding of the underlying physics at the 2D vdW heterointerfaces, the possibility of a black phosphorus (BP)-MoS2 vertical heterostructure as an ultrathin channel material for high-performance 2D (opto)electronic devices is studied. CVD-synthesized MoS2 and micromechanically exfoliated BP crystals are stacked together to form a vertical p-n heterostructure. Optical microscopy, AFM images, and Raman spectroscopy data show that the MoS2 thin films can be used as a passivation layer, protecting BP from deteriorating in ambient conditions for extended period of time or under an elevated temperature in an Ar environment. The IV characteristics of FET devices based on the vertical heterostuctures exhibit that the MoS2 layer has limited impact on superior carrier transport properties of the BP in the dark. Upon light illumination, photoconductivity of the BP-MoS2 heterostructure region increased compared to that of the bare BP region of the same flake, mainly due to the fact that a built-in electric field formed at the BP-MoS2 interface facilitates the dissociation of electron-hole pairs generated by light absorption.

Two dimensional Materials for Photodetector

Two dimensional Materials for Photodetector
Author: Pramoda Kumar Nayak
Publsiher: BoD – Books on Demand
Total Pages: 242
Release: 2018-04-04
ISBN: 9535139517
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Two dimensional Materials for Photodetector Book Excerpt:

Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.

Physics and Technology of Nanostructured Materials IV Supplement Book

Physics and Technology of Nanostructured Materials IV  Supplement Book
Author: Nikolay G. Galkin
Publsiher: Trans Tech Publications Ltd
Total Pages: 228
Release: 2019-06-11
ISBN: 3035735689
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Physics and Technology of Nanostructured Materials IV Supplement Book Book Excerpt:

This volume contains papers, which were presented on the 4th Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT, September 23-28, 2018, Vladivostok, Russia). The represented research results reflect the recent tendencies in the area of development nanostructured materials, semiconductors, functional materials, coatings, and surfaces.

Annual Review of Materials Research

Annual Review of Materials Research
Author: David R. Clarke,Manfred Rühle
Publsiher: Unknown
Total Pages: 451
Release: 2004-08
ISBN: 9780824317348
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Annual Review of Materials Research Book Excerpt:

Annual Review of Materials Research

Annual Review of Materials Research
Author: Anonim
Publsiher: Unknown
Total Pages: 135
Release: 2004
ISBN: 1928374650XXX
Category: Electronic journals
Language: EN, FR, DE, ES & NL

Annual Review of Materials Research Book Excerpt:

Layered Two Dimensional Heterostructures and Their Tunneling Characteristics

Layered Two Dimensional Heterostructures and Their Tunneling Characteristics
Author: Sergio C. de la Barrera
Publsiher: Springer
Total Pages: 141
Release: 2017-11-21
ISBN: 3319692577
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Layered Two Dimensional Heterostructures and Their Tunneling Characteristics Book Excerpt:

This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena. Low-energy electron microscopy is employed to study the surface of atomically thin WSe2 prepared by metal-organic chemical vapor deposition on epitaxial graphene substrates, and a method for unambiguously measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted work function differences from the layers and the nature of the electrical contact between them is revealed. An extension of this analysis is applied to surface studies of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work function difference is measured between the MoSe2 and graphene, and a model is provided which suggests that this observation results from an exceptional defect density in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between two-dimensional crystals separated by a thin insulating barrier; a few situations resulting in resonant tunneling and negative differential resistance are illustrated by computed examples, as well as observed characteristics, for monolayer and bilayer graphene tunneling junctions and transistors.

Infrared Detectors Based on Two dimensional Materials and Heterostructures

Infrared Detectors Based on Two dimensional Materials and Heterostructures
Author: Yuxuan Lin (Ph. D.)
Publsiher: Unknown
Total Pages: 250
Release: 2019
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Infrared Detectors Based on Two dimensional Materials and Heterostructures Book Excerpt:

At the nanoscale, new forms of physical phenomena emerge that can provide remarkable opportunities for next-generation tools with unprecedented functionality and energy efficiency. Two-dimensional (2D) materials, a family of nanomaterials with atomic thickness, promise an ideal platform for nanoscience and nanotechnology research on which we are able to engineer functional structures and study their properties at the limit of the atomic scale. This thesis discusses opportunities and challenges of studying emerging light-matter interaction phenomena and developing advanced infrared detection technologies enabled by 2D materials and their heterostructures. First, we addressed some of the key challenges for reliable synthesis and characterization of 2D materials and functional nanostructures. We developed a new seeding-promoter-assisted chemical vapor deposition approach for the construction of vertical and lateral heterostructures between a variety of 2D materials over large area. This technology enables many new physics and device applications, including 1D ohmic contacts to 2D semiconductors and their integrated circuits. Another material-related challenge we addressed is the fast material characterization of 2D materials. We developed a deep learning algorithm that can perform realtime, accurate material identification on optical microscope images of 2D materials. In addition, our method is able to extract deep graphical features and provide information about structural, optical and mechanical properties of the materials. Second, we studied three novel IR detector technologies based on 2D materials and other nanostructures that can potentially out-perform the state-of-the-art graphene thermopile, graphene-2D semiconductor photothermoelectric detector, and thermo-mechanical bolometer. For the graphene thermopile, our theoretical analysis indicates that a high-quality graphene device provides the highest thermoelectric figure of merit among existing thermoelectric materials. We further demonstrated a monolithic 3D integration of graphene and Si CMOS technologies and fabricated a mid-IR/thermal imaging camera based on graphene thermopiles. For the second IR detection technology, we studied the unique hot carrier thermalization process on a graphene-2D semiconductor lateral heterojunction device, and showed that such a photothermoelectric photocurrent generation mechanism is advantageous in terms of picosecond response time, broadband spectral response, and room temperature operation. The third IR detection technology we demonstrated in this thesis is a thermo-mechanical bolometer, in which the IR radiation is converted into an abrupt resistance change through the special thermo-mechanical response and an artificial metal-insulator transition of engineered nanostructures. Our results show that the sensitivity of this thermo-mechanical mid-IR detector can be at least one order of magnitude better than state-of-the-art microbolometers based on VOx.

Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross sectional Scanning Probe Microscopy

Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross sectional Scanning Probe Microscopy
Author: Paul Arthur Rosenthal
Publsiher: Unknown
Total Pages: 270
Release: 2002
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross sectional Scanning Probe Microscopy Book Excerpt:

2D Semiconductor Materials and Devices

2D Semiconductor Materials and Devices
Author: Dongzhi Chi,K.E.Johnson Goh,Andrew T.S. Wee
Publsiher: Elsevier
Total Pages: 338
Release: 2019-10-19
ISBN: 0128165898
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

2D Semiconductor Materials and Devices Book Excerpt:

2D Semiconductor Materials and Devices reviews the basic science and state-of-art technology of 2D semiconductor materials and devices. Chapters discuss the basic structure and properties of 2D semiconductor materials, including both elemental (silicene, phosphorene) and compound semiconductors (transition metal dichalcogenide), the current growth and characterization methods of these 2D materials, state-of-the-art devices, and current and potential applications. Reviews a broad range of emerging 2D electronic materials beyond graphene, including silicene, phosphorene and compound semiconductors Provides an in-depth review of material properties, growth and characterization aspects—topics that could enable applications Features contributions from the leading experts in the field

Functional Nanomaterials and their Applications

Functional Nanomaterials and their Applications
Author: Hardev Singh Virk
Publsiher: Trans Tech Publications Ltd
Total Pages: 270
Release: 2013-05-14
ISBN: 3038260819
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Functional Nanomaterials and their Applications Book Excerpt:

Volume is indexed by Thomson Reuters BCI (WoS). Functional nanomaterials are the basis of newly emerging nanotechnologies for various device applications. Nanomaterials with many kinds of morphologies and compositions have been extensively investigated, and display various kinds of functionality in areas such as electronic structure, optical effects, spin dynamics, and gas sensing. Because of advanced characterization and new fabrication techniques, nanomaterials are now central to multiple disciplines, including materials science, chemistry, physics, engineering and medicine. This special volume presents a detailed overview of recent research developments on functional nanomaterials, including synthesis, characterization, and applications.

Atomistic Simulations of 2D Materials and Van Der Waal s Heterostructures for Beyond Si CMOS Devices

Atomistic Simulations of 2D Materials and Van Der Waal   s Heterostructures for Beyond Si CMOS Devices
Author: Amithraj Valsaraj
Publsiher: Unknown
Total Pages: 184
Release: 2017
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Atomistic Simulations of 2D Materials and Van Der Waal s Heterostructures for Beyond Si CMOS Devices Book Excerpt:

The unique electrical and optical properties of two-dimensional (2D) materials has spurred intense research interest towards development of nanoelectronic devices utilizing these novel materials. The atomically thin form of 2D materials translates to excellent electrostatic gate control even at nanoscale channel length dimensions, near-ideal two-dimensional carrier behavior, and perhaps conventional and novel devices applications. Monolayer transition metal dichalcogenides (TMDs) are novel, gapped 2D materials. Toward device applications, I consider MoS2 layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional-theory (DFT) simulations, the effects of near-interface oxygen vacancies in the oxide slab, and Mo or S vacancies in the MoS2 layer are considered. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS2-dielectrics system and for isolated dielectric layers for reference. Among the results, I find that with O-vacancies, both the HfO2-MoS2 and the Al2O3-MoS2 systems appear metallic due to doping of the oxide slab followed by electron transfer into the MoS2, in manner analogous to modulation doping. The n-type doping of monolayer MoS2 by high-k oxides with O-vacancies is confirmed through collaborative experimental work in which back-gated monolayer MoS2 FETs encapsulated by oxygen deficient high-k oxides have been characterized. Van der Waal’s heterostructures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, I consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, I simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. Rotational misalignment between the channel layers and the tunnel barrier in this van der Waal’s heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal’s heterostructures. TMDs are viable alternatives to graphene and hBN as channel and tunnel barrier layers, respectively, for improved performance in interlayer tunnel FET device structures. In particular, I used DFT simulations to study the bilayer-graphene/WSe2/bilayer-graphene heterostructure as well as single and multilayer ReS2-layer systems. Significant roadblocks to the widespread use of TMDs for nanoelectronic devices are the large contact resistance and absence of reliable doping techniques. Hence, I studied substitutional doping of, and evaluated various metal contacts to MoS2 by computing the density of states for the systems. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. My simulation results suggest that monolayer (ML) MoS2 can be doped n-type or p-type by substituting for an S atom in the supercell with a group-17 Cl atom or a group-15 P atom, respectively. My simulations also suggest that Sc and Ti would serve as excellent contacts to n-type ML MoS2 due to the strong bonding and large number of states near the Fermi level. But the theoretical expectations are tempered by the material characteristics, i.e., the extremely reactive nature of Sc and the oxidation prone nature of Ti atoms. I also studied commonly used Ag and Au metal contacts to ML MoS2, which exhibited medium strength bonding to MoS2 and an apparent pinning of the Fermi level nearer to the nominal MoS2 conduction band edge

Shape Control of Multi material Heterostructures for Catalytic Applications

Shape Control of Multi material Heterostructures for Catalytic Applications
Author: Susan Ellen Habas
Publsiher: Unknown
Total Pages: 230
Release: 2008
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Shape Control of Multi material Heterostructures for Catalytic Applications Book Excerpt:

GaN AIN InN and Related Materials Volume 892

GaN  AIN  InN and Related Materials  Volume 892
Author: Martin Kuball,Thomas H. Myers,Joan M. Redwing,Takashi Mukai
Publsiher: Mrs Proceedings
Total Pages: 896
Release: 2006-03-27
ISBN: 1928374650XXX
Category: Science
Language: EN, FR, DE, ES & NL

GaN AIN InN and Related Materials Volume 892 Book Excerpt:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Integration of 2D Materials for Electronics Applications

Integration of 2D Materials for Electronics Applications
Author: Filippo Giannazzo,Samuel Lara Avila,Jens Eriksson,Sushant Sonde
Publsiher: MDPI
Total Pages: 264
Release: 2019-02-13
ISBN: 3038976067
Category: Science
Language: EN, FR, DE, ES & NL

Integration of 2D Materials for Electronics Applications Book Excerpt:

This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals

2002 International Conference on Computational Nanoscience and Nanotechnology

2002 International Conference on Computational Nanoscience and Nanotechnology
Author: Matthew Laudon
Publsiher: Unknown
Total Pages: 503
Release: 2002
ISBN: 1928374650XXX
Category: Actuators
Language: EN, FR, DE, ES & NL

2002 International Conference on Computational Nanoscience and Nanotechnology Book Excerpt:

The worlds most comprehensive and up-to-date collection of Nanotechnology and Nanoscience technical papers. Technical Proceedings of the Nanotech 2002 and the International Conference on Computational Nanoscience and Nanotechnology. Nanotech Vol. 1: Sequence and Biological Structure, Computer Aided Drug Design, Biological Conduction Processes, Biotechnology, Micro and Nano Fluidic Systems, Soft Condensed Matter, Extedned-Scale Atomistics, Quantum Effects, Quantum Devices, Spintronics, Mechanical Properties at the Nanoscale, Molecular and Nano Electronics, Condensed Matter Phenomena, Process Modeling, Nanotechnology, Materials and Nanostructures Studies, Nano Particles and Molecules. Papers taken from the 2002 Nanotechnology Conference and Trade Show, San Juan, Puerto Rico, April. 2002.

Two Dimensional Transition Metal Dichalcogenides

Two Dimensional Transition Metal Dichalcogenides
Author: Narayanasamy Sabari Arul,Vellalapalayam Devaraj Nithya
Publsiher: Springer
Total Pages: 355
Release: 2019-07-30
ISBN: 9811390452
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Two Dimensional Transition Metal Dichalcogenides Book Excerpt:

This book presents advanced synthesis techniques adopted to fabricate two-dimensional (2D) transition metal dichalcogenides (TMDs) materials with its enhanced properties towards their utilization in various applications such as, energy storage devices, photovoltaics, electrocatalysis, electronic devices, photocatalysts, sensing and biomedical applications. It provides detailed coverage on everything from the synthesis and properties to the applications and future prospects of research in 2D TMD nanomaterials.

Nanoscale Devices Consisting of Heterostructures of Carbon Nanotubes and Two dimensional Layered Materials

Nanoscale Devices Consisting of Heterostructures of Carbon Nanotubes and Two dimensional Layered Materials
Author: Mohsen Nasseri
Publsiher: Unknown
Total Pages: 125
Release: 2018
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Nanoscale Devices Consisting of Heterostructures of Carbon Nanotubes and Two dimensional Layered Materials Book Excerpt:

2004 Graduate Programs in Physics Astronomy and Related Fields

2004 Graduate Programs in Physics  Astronomy  and Related Fields
Author: American Institute of Physics
Publsiher: American Institute of Physics
Total Pages: 862
Release: 2003-11-06
ISBN: 9780735401235
Category: Science
Language: EN, FR, DE, ES & NL

2004 Graduate Programs in Physics Astronomy and Related Fields Book Excerpt:

This comprehensive compendium provides information on nearly every U.S. doctoral program in physics and astronomy, plus data on most major master's programs in these fields. Information on many major Canadian programs is also included. In addition, the Graduate Programs directory lists a substantial number of related-field departments, including materials science, electrical and nuclear engineering, meteorology, medical and chemical physics, geophysics, and oceanography. This twenty-eighth annual edition contains information valuable to students planning graduate study and faculty advisors, including each program's research expenditures and sources of support. A number of helpful appendices make navigating the directory a simple task.