Fully Depleted Silicon On Insulator

Fully Depleted Silicon On Insulator
Author: Sorin Cristoloveanu
Publsiher: Elsevier
Total Pages: 384
Release: 2021-08-04
ISBN: 0128231653
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Fully Depleted Silicon On Insulator Book Excerpt:

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Silicon on Insulator Technology Materials to VLSI

Silicon on Insulator Technology  Materials to VLSI
Author: J.-P. Colinge
Publsiher: Springer Science & Business Media
Total Pages: 392
Release: 2004-02-29
ISBN: 9781402077739
Category: Science
Language: EN, FR, DE, ES & NL

Silicon on Insulator Technology Materials to VLSI Book Excerpt:

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

New Insulators Devices and Radiation Effects

New Insulators Devices and Radiation Effects
Author: Anonim
Publsiher: Elsevier
Total Pages: 967
Release: 1999-02-11
ISBN: 9780080534763
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

New Insulators Devices and Radiation Effects Book Excerpt:

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

Nanowire Transistors

Nanowire Transistors
Author: Jean-Pierre Colinge,James C. Greer,Jim Greer
Publsiher: Cambridge University Press
Total Pages: 269
Release: 2016-04-21
ISBN: 1107052408
Category: Science
Language: EN, FR, DE, ES & NL

Nanowire Transistors Book Excerpt:

A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

Electrical Characterization of Silicon on Insulator Materials and Devices

Electrical Characterization of Silicon on Insulator Materials and Devices
Author: Sorin Cristoloveanu,Sheng Li
Publsiher: Springer Science & Business Media
Total Pages: 381
Release: 2013-11-27
ISBN: 1461522455
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Electrical Characterization of Silicon on Insulator Materials and Devices Book Excerpt:

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2013 Wofe 2013

Frontiers In Electronics  Selected Papers From The Workshop On Frontiers In Electronics 2013  Wofe 2013
Author: Sorin Cristoloveanu,Michael S Shur
Publsiher: World Scientific
Total Pages: 188
Release: 2014-12-15
ISBN: 9814656925
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2013 Wofe 2013 Book Excerpt:

This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Silicon on insulator Technology and Devices XI

Silicon on insulator Technology and Devices XI
Author: Electrochemical Society. Meeting
Publsiher: The Electrochemical Society
Total Pages: 538
Release: 2003
ISBN: 9781566773751
Category: Semiconductors
Language: EN, FR, DE, ES & NL

Silicon on insulator Technology and Devices XI Book Excerpt:

Frontiers in Electronics

Frontiers in Electronics
Author: Yoon Soo Park,Michael S Shur,William Tang
Publsiher: World Scientific
Total Pages: 400
Release: 2003-01-29
ISBN: 9814487082
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Frontiers in Electronics Book Excerpt:

The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents:Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea)MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.)Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.)Materials for Strained Silicon Devices (P M Mooney)System-on-Chip Integration (R R Doering)Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.)Electrotextiles (E Ethridge & D Urban)System Impact of Silicon Carbide Power Devices (B Ozpineci et al.)Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.)Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.)Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.)Thermal Management in Optoelectronics (D K Johnstone)Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.)Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey)Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev)and other papers Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices. Keywords:Microelectronics;Nanoelectronics;Integrated Circuits;Nanostructures;Solid State Lighting;Semiconductors

Evolution of Silicon Sensor Technology in Particle Physics

Evolution of Silicon Sensor Technology in Particle Physics
Author: Frank Hartmann
Publsiher: Springer
Total Pages: 372
Release: 2017-11-06
ISBN: 331964436X
Category: Science
Language: EN, FR, DE, ES & NL

Evolution of Silicon Sensor Technology in Particle Physics Book Excerpt:

This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to actual implementation to lessons learned.

ULSI Process Integration II

ULSI Process Integration II
Author: Cor L. Claeys,Electrochemical Society. Meeting
Publsiher: The Electrochemical Society
Total Pages: 636
Release: 2001
ISBN: 9781566773089
Category: Integrated circuits
Language: EN, FR, DE, ES & NL

ULSI Process Integration II Book Excerpt:

Silicon on insulator Technology and Devices XII

Silicon on insulator Technology and Devices XII
Author: Electrochemical Society. Meeting
Publsiher: The Electrochemical Society
Total Pages: 412
Release: 2005
ISBN: 9781566774611
Category: Science
Language: EN, FR, DE, ES & NL

Silicon on insulator Technology and Devices XII Book Excerpt:

Silicon On Insulator SOI Technology

Silicon On Insulator  SOI  Technology
Author: O. Kononchuk,B.-Y. Nguyen
Publsiher: Elsevier
Total Pages: 496
Release: 2014-06-19
ISBN: 0857099256
Category: Science
Language: EN, FR, DE, ES & NL

Silicon On Insulator SOI Technology Book Excerpt:

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

Silicon on Insulator Technology and Devices X

Silicon on Insulator Technology and Devices X
Author: Electrochemical Society. Electronics Division,Electrochemical Society. Meeting
Publsiher: The Electrochemical Society
Total Pages: 482
Release: 2001
ISBN: 9781566773096
Category: Semiconductors
Language: EN, FR, DE, ES & NL

Silicon on Insulator Technology and Devices X Book Excerpt:

Reconfigurable Field Programmable Gate Arrays for Mission Critical Applications

Reconfigurable Field Programmable Gate Arrays for Mission Critical Applications
Author: Niccolò Battezzati,Luca Sterpone,Massimo Violante
Publsiher: Springer Science & Business Media
Total Pages: 220
Release: 2010-11-09
ISBN: 1441975950
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Reconfigurable Field Programmable Gate Arrays for Mission Critical Applications Book Excerpt:

Embedded systems applications that are either mission or safety-critical usually entail low- to mid- production volumes, require the rapid development of specific tasks, which are typically computing intensive, and are cost bounded. The adoption of re-configurable FPGAs in such application domains is constrained to the availability of suitable techniques to guarantee the dependability requirements entailed by critical applications. This book describes the challenges faced by designers when implementing a mission- or safety-critical application using re-configurable FPGAs and it details various techniques to overcome these challenges. In addition to an overview of the key concepts of re-configurable FPGAs, it provides a theoretical description of the failure modes that can cause incorrect operation of re-configurable FPGA-based electronic systems. It also outlines analysis techniques that can be used to forecast such failures and covers the theory behind solutions to mitigate fault effects. This book also reviews current technologies available for building re-configurable FPGAs, specifically SRAM-based technology and Flash-based technology. For each technology introduced, theoretical concepts presented are applied to real cases. Design techniques and tools are presented to develop critical applications using commercial, off-the-shelf devices, such as Xilinx Virtex FPGAs, and Actel ProASIC FPGAs. Alternative techniques based on radiation hardened FPGAs, such as Xilinx SIRF and Atmel ATF280 are also presented. This publication is an invaluable reference for anyone interested in understanding the technologies of re-configurable FPGAs, as well as designers developing critical applications based on these technologies.

World Internet Development Report 2020

World Internet Development Report 2020
Author: Chinese Academy of Cyberspace Studies
Publsiher: Springer Nature
Total Pages: 238
Release: 2022-08-27
ISBN: 9811693889
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

World Internet Development Report 2020 Book Excerpt:

This book systematically reviews the development process of the world Internet and comprehensively reveals the great contributions of the Internet to economic development and social progress. The world today is marked by changes unseen in a century, and Internet development is facing new opportunities and challenges. In 2020, the COVID-19 epidemic broke out and spread at the global scale, which enormously impacted the global economy and society. Internet played an increasingly important role. Meanwhile, based on the development status of the global Internet, this book fully reflects the development process, status and trend of the world Internet in 2020, systematically summarizes the development status and highlights of the Internet in the major countries around the world, and makes an in-depth analysis of the new conditions, new dynamics and new trends of the development in the key Internet fields; the contents cover the information infrastructure, information technology, digital economy, digital government, internet media, network security, and international cyberspace governance, and other aspects. Moreover, this book further adjusts and enriches the development index systems of the world Internet, in the hope of better showing the development strength and development advantages of the Internet in various countries, and reflecting the overall development trend of the world Internet more comprehensively, accurately and objectively. From an objective perspective, this book collects the latest research results in the global internet field, featuring comprehensive contents and highlights; from a historical perspective, this book reviews the significant development process of the global internet, summarizes the experience and faces the future; from a global perspective, this book tries to construct the cyberspace community with a common future based on the new concepts, new ideas and new achievements of various countries in participating in cyberspace development and construction. This book provides an important reference value for employees in Internet fields, such as government departments, Internet enterprises, scientific research institutions, colleges and universities, to fully understand and master the development of the world internet.

Silicon on Insulator Technology and Devices 14

Silicon on Insulator Technology and Devices 14
Author: Yasuhisa Omura
Publsiher: The Electrochemical Society
Total Pages: 357
Release: 2009
ISBN: 1566777127
Category: Semiconductors
Language: EN, FR, DE, ES & NL

Silicon on Insulator Technology and Devices 14 Book Excerpt:

This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors

Perspectives Science and Technologies for Novel Silicon on Insulator Devices

Perspectives  Science and Technologies for Novel Silicon on Insulator Devices
Author: Peter L.F. Hemment,Vladimir S. Lysenko,Alexei N. Nazarov
Publsiher: Springer Science & Business Media
Total Pages: 344
Release: 2012-12-06
ISBN: 9401142610
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Perspectives Science and Technologies for Novel Silicon on Insulator Devices Book Excerpt:

This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.

Nanophononics

Nanophononics
Author: Zlatan Aksamija
Publsiher: CRC Press
Total Pages: 224
Release: 2017-11-22
ISBN: 1351609432
Category: Science
Language: EN, FR, DE, ES & NL

Nanophononics Book Excerpt:

Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.

Extreme Environment Electronics

Extreme Environment Electronics
Author: John D. Cressler,H. Alan Mantooth
Publsiher: CRC Press
Total Pages: 1044
Release: 2017-12-19
ISBN: 1351832808
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Extreme Environment Electronics Book Excerpt:

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors ULSIC vs TFT

2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors  ULSIC vs  TFT
Author: Anonim
Publsiher: The Electrochemical Society
Total Pages: 256
Release: 2011
ISBN: 1566778999
Category: Integrated circuits
Language: EN, FR, DE, ES & NL

2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors ULSIC vs TFT Book Excerpt: