Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 1069
Release: 2010-04-02
ISBN: 0387473149
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Fundamentals of Power Semiconductor Devices Book Excerpt:

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Springer
Total Pages: 1072
Release: 2010-11-16
ISBN: 9780387564401
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Fundamentals of Power Semiconductor Devices Book Excerpt:

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Advanced Power MOSFET Concepts

Advanced Power MOSFET Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 562
Release: 2010-06-26
ISBN: 1441959173
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Advanced Power MOSFET Concepts Book Excerpt:

During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Advanced Power Rectifier Concepts

Advanced Power Rectifier Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 352
Release: 2009-06-16
ISBN: 9780387755892
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Advanced Power Rectifier Concepts Book Excerpt:

During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.

Entrepreneurship in Power Semiconductor Devices Power Electronics and Electric Machines and Drive Systems

Entrepreneurship in Power Semiconductor Devices  Power Electronics  and Electric Machines and Drive Systems
Author: Krishnan Ramu
Publsiher: CRC Press
Total Pages: 430
Release: 2020-12-08
ISBN: 1000287866
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Entrepreneurship in Power Semiconductor Devices Power Electronics and Electric Machines and Drive Systems Book Excerpt:

Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book. Each field’s emerging applications, current market and future market forecasts are introduced to understand the basis and need for emerging startups. Practical learning is introduced in: (i) power semiconductor devices entrepreneurship through the prism of 20 startups in detail, (ii) power electronics entrepreneurship through 28 startup companies arranged under various application fields and (iii) electric machines and drive systems entrepreneurship through 15 startups in electromagnetic and 1 in electrostatic machines and drive systems. The book: (i) demystifies entrepreneurship in a practical way to equip engineers and students with entrepreneurship as an option for their professional growth, pursuit and success; (ii) provides engineering managers and corporate-level executives a detailed view of entrepreneurship activities in the considered three fields that may potentially impact their businesses, (iii) provides entrepreneurship education in an electrical engineering environment and with direct connection and correlation to their fields of study and (iv) endows a methodology that can be effectively employed not only in the three illustrated fields of electrical engineering but in other fields as well. This book is for electrical engineering students and professionals. For use in undergraduate and graduate courses in electrical engineering, the book contains discussion questions, exercise problems, team and class projects, all from a practical point of view, to train students and assist professionals for future entrepreneurship endeavors.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author: B. Jayant Baliga
Publsiher: Woodhead Publishing
Total Pages: 418
Release: 2018-10-17
ISBN: 0081023073
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Wide Bandgap Semiconductor Power Devices Book Excerpt:

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

The IGBT Device

The IGBT Device
Author: B. Jayant Baliga
Publsiher: William Andrew
Total Pages: 732
Release: 2015-03-06
ISBN: 1455731536
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

The IGBT Device Book Excerpt:

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Power Electronics in Renewable Energy Systems and Smart Grid

Power Electronics in Renewable Energy Systems and Smart Grid
Author: Bimal K. Bose
Publsiher: John Wiley & Sons
Total Pages: 720
Release: 2019-07-30
ISBN: 1119515629
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Power Electronics in Renewable Energy Systems and Smart Grid Book Excerpt:

This book is an advanced approach to power electronics specifically in terms of renewable energy systems and smart grid. The fourteen chapters are updated and extended versions of the invited papers in the Proc. IEEE special issue of November 2017, contributed by a group of invited authors who are international authorities in their field. The application-oriented chapters are tutorial oriented, with technology status review. The book also includes examples of applications and discussions of future perspectives.

Advanced High Voltage Power Device Concepts

Advanced High Voltage Power Device Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 568
Release: 2011-09-21
ISBN: 9781461402695
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Advanced High Voltage Power Device Concepts Book Excerpt:

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power Devices
Author: B Jayant Baliga
Publsiher: World Scientific Publishing Company
Total Pages: 592
Release: 2016-12-12
ISBN: 9813109424
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Gallium Nitride and Silicon Carbide Power Devices Book Excerpt:

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Power Electronics Device Applications of Diamond Semiconductors

Power Electronics Device Applications of Diamond Semiconductors
Author: Satoshi Koizumi,Hitoshi Umezawa,Julien Pernot,Mariko Suzuki
Publsiher: Woodhead Publishing
Total Pages: 466
Release: 2018-06-29
ISBN: 0081021844
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Power Electronics Device Applications of Diamond Semiconductors Book Excerpt:

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Physics of Semiconductor Devices

Physics of Semiconductor Devices
Author: Simon M. Sze,Yiming Li,Kwok K. Ng
Publsiher: John Wiley & Sons
Total Pages: 944
Release: 2021-03-03
ISBN: 1119429110
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Physics of Semiconductor Devices Book Excerpt:

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Wide Bandgap Semiconductor Materials and Devices 16

Wide Bandgap Semiconductor Materials and Devices 16
Author: S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
Publsiher: The Electrochemical Society
Total Pages: 335
Release: 2015
ISBN: 1607685914
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Wide Bandgap Semiconductor Materials and Devices 16 Book Excerpt:

Lateral Power Transistors in Integrated Circuits

Lateral Power Transistors in Integrated Circuits
Author: Tobias Erlbacher
Publsiher: Springer
Total Pages: 223
Release: 2014-10-08
ISBN: 3319005006
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Lateral Power Transistors in Integrated Circuits Book Excerpt:

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Power Electronics Handbook

Power Electronics Handbook
Author: Muhammad H. Rashid
Publsiher: Butterworth-Heinemann
Total Pages: 1522
Release: 2017-09-09
ISBN: 0128114088
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Power Electronics Handbook Book Excerpt:

Power Electronics Handbook, Fourth Edition, brings together over 100 years of combined experience in the specialist areas of power engineering to offer a fully revised and updated expert guide to total power solutions. Designed to provide the best technical and most commercially viable solutions available, this handbook undertakes any or all aspects of a project requiring specialist design, installation, commissioning and maintenance services. Comprising a complete revision throughout and enhanced chapters on semiconductor diodes and transistors and thyristors, this volume includes renewable resource content useful for the new generation of engineering professionals. This market leading reference has new chapters covering electric traction theory and motors and wide band gap (WBG) materials and devices. With this book in hand, engineers will be able to execute design, analysis and evaluation of assigned projects using sound engineering principles and adhering to the business policies and product/program requirements. Includes a list of leading international academic and professional contributors Offers practical concepts and developments for laboratory test plans Includes new technical chapters on electric vehicle charging and traction theory and motors Includes renewable resource content useful for the new generation of engineering professionals

Fundamentals of Power Electronics

Fundamentals of Power Electronics
Author: Erickson
Publsiher: Springer Science & Business Media
Total Pages: 773
Release: 2013-06-29
ISBN: 1461576466
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Fundamentals of Power Electronics Book Excerpt:

In many university curricula, the power electronics field has evolved beyond the status of comprising one or two special-topics courses. Often there are several courses dealing with the power electronics field, covering the topics of converters, motor drives, and power devices, with possibly additional advanced courses in these areas as well. There may also be more traditional power-area courses in energy conversion, machines, and power systems. In the breadth vs. depth tradeoff, it no longer makes sense for one textbook to attempt to cover all of these courses; indeed, each course should ideally employ a dedicated textbook. This text is intended for use in introductory power electronics courses on converters, taught at the senior or first-year graduate level. There is sufficient material for a one year course or, at a faster pace with some material omitted, for two quarters or one semester. The first class on converters has been called a way of enticing control and electronics students into the power area via the "back door". The power electronics field is quite broad, and includes fundamentals in the areas of • Converter circuits and electronics • Control systems • Magnetics • Power applications • Design-oriented analysis This wide variety of areas is one of the things which makes the field so interesting and appealing to newcomers. This breadth also makes teaching the field a challenging undertaking, because one cannot assume that all students enrolled in the class have solid prerequisite knowledge in so many areas.

Parasitic Substrate Coupling in High Voltage Integrated Circuits

Parasitic Substrate Coupling in High Voltage Integrated Circuits
Author: Pietro Buccella,Camillo Stefanucci,Maher Kayal,Jean-Michel Sallese
Publsiher: Springer
Total Pages: 183
Release: 2018-03-14
ISBN: 3319743821
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Parasitic Substrate Coupling in High Voltage Integrated Circuits Book Excerpt:

This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.

Power Electronics

Power Electronics
Author: M. H. Rashid
Publsiher: Unknown
Total Pages: 752
Release: 1993
ISBN: 1928374650XXX
Category: Electronic circuit design
Language: EN, FR, DE, ES & NL

Power Electronics Book Excerpt:

An exploration of the state-of-the-art in power conversion techniques and power semiconductor devices, this edition features a bottom-down approach, covering the characteristics of power semiconductor devices first and then the fundamentals of conversion techniques. It also examines the characteristics of modern ower semiconductor devices such as SCrs, BJTs, MOSFETs, SITs, SITHs, IGBTs and MCTs.

Power Electronics and Its Applications

Power Electronics and Its Applications
Author: Anonim
Publsiher: Penram International Publishing (India) Pvt. Ltd.
Total Pages: 489
Release: 2004
ISBN: 8187972130
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Power Electronics and Its Applications Book Excerpt:

Fundamentals of Power Electronics

Fundamentals of Power Electronics
Author: M. H. Rashid
Publsiher: Institute of Electrical & Electronics Engineers(IEEE)
Total Pages: 203
Release: 1996
ISBN: 1928374650XXX
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Fundamentals of Power Electronics Book Excerpt:

This comprehensive introduction to power semiconductor devices, their characteristics, and their ratings will take you step-by-step through the most important topics in the field. Highly applications-oriented, this course presents the student with six projects which offer the opportunity to simulate results on a computer using software such as SPICE or PSpice. This course is ideal for engineers, engineering managers, technicians, and anyone with an interest in the theory, analysis, design, or applications of power electronics circuits and systems.