Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author: Valeri V. Afanas'ev
Publsiher: Elsevier
Total Pages: 312
Release: 2010-07-07
ISBN: 9780080555898
Category: Science
Language: EN, FR, DE, ES & NL

Internal Photoemission Spectroscopy Book Excerpt:

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author: Valeri V. Afanas'ev
Publsiher: Elsevier
Total Pages: 404
Release: 2014-02-22
ISBN: 0080999301
Category: Science
Language: EN, FR, DE, ES & NL

Internal Photoemission Spectroscopy Book Excerpt:

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
Author: V. V. Afanasʹev
Publsiher: Elsevier Science Limited
Total Pages: 295
Release: 2008
ISBN: 9780080451459
Category: Science
Language: EN, FR, DE, ES & NL

Internal Photoemission Spectroscopy Book Excerpt:

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several "hot" topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Internal Photoemission Spectroscopy of Semiconductor insulator Interfaces

Internal Photoemission Spectroscopy of Semiconductor insulator Interfaces
Author: V. K. Adamchuk,V. V. Afanasʹev
Publsiher: Unknown
Total Pages: 101
Release: 1992
ISBN: 1928374650XXX
Category: Atomic emission spectroscopy
Language: EN, FR, DE, ES & NL

Internal Photoemission Spectroscopy of Semiconductor insulator Interfaces Book Excerpt:

Metrology and Diagnostic Techniques for Nanoelectronics

Metrology and Diagnostic Techniques for Nanoelectronics
Author: Zhiyong Ma,David G. Seiler
Publsiher: CRC Press
Total Pages: 1454
Release: 2017-03-27
ISBN: 135173394X
Category: Science
Language: EN, FR, DE, ES & NL

Metrology and Diagnostic Techniques for Nanoelectronics Book Excerpt:

Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Photoelectron Spectroscopy

Photoelectron Spectroscopy
Author: Stephan Hüfner
Publsiher: Springer Science & Business Media
Total Pages: 662
Release: 2013-03-09
ISBN: 3662092808
Category: Science
Language: EN, FR, DE, ES & NL

Photoelectron Spectroscopy Book Excerpt:

The author, S. Hüfner, presents an authoritative and up-to-date introduction to the field by comprehensively treating the electronic structures of atoms, molecules, solids, and surfaces. Brief descriptions are given of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout the third edition book and the results are carefully interpreted in terms of the theory. A wealth of measured data is presented in tabulator form for easy use by experimentalists. The reader will learn about the basic technique of photoemission spectroscopy and obtain the necessary background for work based on this book.

High k Gate Dielectrics for CMOS Technology

High k Gate Dielectrics for CMOS Technology
Author: Gang He,Zhaoqi Sun
Publsiher: John Wiley & Sons
Total Pages: 590
Release: 2012-08-10
ISBN: 3527646361
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

High k Gate Dielectrics for CMOS Technology Book Excerpt:

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Metal semiconductor Interfaces

Metal semiconductor Interfaces
Author: Akio Hiraki
Publsiher: IOS Press
Total Pages: 399
Release: 1995
ISBN: 9789051992052
Category: Science
Language: EN, FR, DE, ES & NL

Metal semiconductor Interfaces Book Excerpt:

This volume is a collection of papers written by the authors who were selected among the members of a project on ``Metal-Semiconductor Interfaces'' sponsored by the Ministry of Education, Science and Culture of Japan (MON-BUSHO). The M-S Interface is a problem which stems from the 1930's when the concept of surface states was first proposed by Tamm, shortly later by Shockley, and then clearly by Bardeen in 1947 to catalyze the invention of the transistor, and still exists today when one can count almost one billion M-S interfaces or contacts in a Si chip whose size is less than 1 cm square. Consequently, there have been plenty of research activities all over the world, especially over the last 15 years. The ``M-S Interfaces'' project was composed of four research branches to tackle the following subjects to be reported in the book: Theoretical Approaches, Initial Stage of M-S Interface Formation, Interface Structure of M-S Systems, Realization and Control of Contact Characterization, and Novel Characterization Techniques of Buried Interfaces.

Silicon Carbide

Silicon Carbide
Author: Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl
Publsiher: Springer Science & Business Media
Total Pages: 899
Release: 2013-04-17
ISBN: 3642188702
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Silicon Carbide Book Excerpt:

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces
Author: Winfried Mönch
Publsiher: Springer Science & Business Media
Total Pages: 264
Release: 2013-04-17
ISBN: 3662069458
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Electronic Properties of Semiconductor Interfaces Book Excerpt:

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The MOS System

The MOS System
Author: Olof Engström
Publsiher: Cambridge University Press
Total Pages: 135
Release: 2014-09-25
ISBN: 1316060624
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

The MOS System Book Excerpt:

This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

Publications

Publications
Author: United States. National Bureau of Standards
Publsiher: Unknown
Total Pages: 135
Release: 1978
ISBN: 1928374650XXX
Category: Government publications
Language: EN, FR, DE, ES & NL

Publications Book Excerpt:

NBS Special Publication

NBS Special Publication
Author: Anonim
Publsiher: Unknown
Total Pages: 135
Release: 1968
ISBN: 1928374650XXX
Category: Weights and measures
Language: EN, FR, DE, ES & NL

NBS Special Publication Book Excerpt:

Publications of the National Bureau of Standards Catalog

Publications of the National Bureau of Standards     Catalog
Author: United States. National Bureau of Standards
Publsiher: Unknown
Total Pages: 135
Release: 1978
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Publications of the National Bureau of Standards Catalog Book Excerpt:

Springer Handbook of Electronic and Photonic Materials

Springer Handbook of Electronic and Photonic Materials
Author: Safa Kasap
Publsiher: Springer Science & Business Media
Total Pages: 1406
Release: 2006
ISBN: 0387291857
Category: Science
Language: EN, FR, DE, ES & NL

Springer Handbook of Electronic and Photonic Materials Book Excerpt:

Contributions from well known and respected researchers throughout the world Thorough coverage of electronic and opto-electronic materials that today's electrical engineers, material scientists and physicists need Interdisciplinary approach encompasses research in disciplines such as materials science, electrical engineering, chemical engineering, mechanical engineering, physics and chemistry

Catalog of National Bureau of Standards Publications 1966 1976

Catalog of National Bureau of Standards Publications  1966 1976
Author: United States. National Bureau of Standards. Technical Information and Publications Division,Betty L. Burris,Rebecca J. Morehouse
Publsiher: Unknown
Total Pages: 135
Release: 1978
ISBN: 1928374650XXX
Category: Government publications
Language: EN, FR, DE, ES & NL

Catalog of National Bureau of Standards Publications 1966 1976 Book Excerpt:

Catalog of National Bureau of Standards Publications 1966 1976

Catalog of National Bureau of Standards Publications  1966 1976
Author: United States. National Bureau of Standards
Publsiher: Unknown
Total Pages: 135
Release: 1978
ISBN: 1928374650XXX
Category: Government publications
Language: EN, FR, DE, ES & NL

Catalog of National Bureau of Standards Publications 1966 1976 Book Excerpt:

Wide Gap Chalcopyrites

Wide Gap Chalcopyrites
Author: Susanne Siebentritt,Uwe Rau
Publsiher: Springer Science & Business Media
Total Pages: 260
Release: 2006-02-25
ISBN: 3540312935
Category: Science
Language: EN, FR, DE, ES & NL

Wide Gap Chalcopyrites Book Excerpt:

Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.

Surfaces and Interfaces of Electronic Materials

Surfaces and Interfaces of Electronic Materials
Author: Leonard J. Brillson
Publsiher: John Wiley & Sons
Total Pages: 586
Release: 2012-06-26
ISBN: 3527665722
Category: Technology & Engineering
Language: EN, FR, DE, ES & NL

Surfaces and Interfaces of Electronic Materials Book Excerpt:

An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/

Publications of the National Institute of Standards and Technology Catalog

Publications of the National Institute of Standards and Technology     Catalog
Author: National Institute of Standards and Technology (U.S.)
Publsiher: Unknown
Total Pages: 135
Release: 1977
ISBN: 1928374650XXX
Category: Electronic Book
Language: EN, FR, DE, ES & NL

Publications of the National Institute of Standards and Technology Catalog Book Excerpt: